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ISL9N2357D3ST - N-Channel Power MOSFET

Key Features

  • rDS(ON) = 0.006Ω Typical, VGS = 10V.
  • Qg Total 85nC Typical, VGS = 10V.
  • Qgd 16nC Typical.
  • CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol D G GATE SOURCE S Ordering Information PART NUMBER ISL9N2357D3ST.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET® Trench Power MOSFET UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching and low gate charge. The reduced conduction and switching losses extend battery life in notebook PCs, cellular telephones and other portable information appliances and improve the overall efficiency of high frequency DC-DC converters used to power the latest microprocessors. UltraFET® Trench Features • rDS(ON) = 0.