ISL9N303AP3 - N-Channel Power MOSFET

Fairchild (onsemi)

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

low gate charge while maintaining low on-resistance. Optimized for switching.

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ISL9N303AP3 n-channel power mosfet by Fairchild (onsemi) - Datasheet Preview

Datasheet Details

Part number	ISL9N303AP3
Manufacturer	Fairchild (onsemi)
File Size	269.83 KB
Description	N-Channel Power MOSFET
Datasheet	ISL9N303AP3 Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number	Description
ISL9N303AS3	N-Channel Power MOSFET
ISL9N303AS3ST	N-Channel Power MOSFET
ISL9N302AP3	N-Channel Power MOSFET
ISL9N302AS3ST	N-Channel Power MOSFET
ISL9N304AP3	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 3.2mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0026Ω (Typ), VGS = 10V • rDS(ON) = 0.004Ω (Typ), VGS = 4.