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HUFA75433S3S
March 2002
HUFA75433S3S
N-Channel UltraFET® MOSFETs 60V, 64A, 16mΩ
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
HUFA75433S3S Datasheet
