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HUFA75429D3S - N-Channel MOSFET

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance.

Features

  • 175°C Maximum Junction Temperature.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 125oC, VGS = 10V, RθJA = 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Not.

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Full PDF Text Transcription

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HUFA75429D3S March 2002 HUFA75429D3S N-Channel UltraFET® MOSFETs 60V, 20A, 25mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches.
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