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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
HUFA75545P3
DESCRIPTION ·Drain Current ID=75A@ TC=25℃ ·Drain Source Voltage-
: VDSS=80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 10mΩ(Max) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in applications such as switching Regulators,switching converters, motor drivers and Relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS VGS ID PD
Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃
Tj
Max.
HUFA75545P3 Datasheet
