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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
HUF75345S3ST
·DESCRIPTION ·Drain Current: ID= 75A@ TC=25℃ ·Drain Source Voltage
: VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Designed for high current, high speed switching, switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
55
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
75
A
PD
Total Dissipation@TC=25℃
325
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.