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HUF75852G3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Full PDF Text Transcription

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Data Sheet HUF75852G3 December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN (TAB) Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER PACKAGE HUF75852G3 TO-247 BRAND 75852G Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75852G3 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . .
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