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HUF75829D3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Full PDF Text Transcription

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Data Sheet 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) HUF75829D3 GATE SOURCE HUF75829D3S Symbol D G S HUF75829D3, HUF75829D3S February 2000 File Number 4795.1 Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER PACKAGE BRAND HUF75829D3 TO-251AA 75829D HUF75829D3S TO-252AA 75829D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75829D3ST.
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