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HUF75823D3S - N-Channel MOSFET

Features

  • SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE).
  • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve HUF75829D3 HUF75829D3S Symbol D.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Full PDF Text Transcription

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HUF75829D3, HUF75829D3S Data Sheet December 2001 18A, 150V, 0.110 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve HUF75829D3 HUF75829D3S Symbol D • UIS Rating Curve Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 75829D 75829D HUF75829D3 HUF75829D3S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75829D3ST.
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