FQI58N08 - N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI58N08
Manufacturer	Fairchild Semiconductor
File Size	660.23 KB
Description	N-Channel MOSFET
Datasheet	FQI58N08 Datasheet
Additional preview pages of the FQI58N08 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

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Published: Dec 30, 2006 |