FQI8N60C Datasheet N-Channel MOSFET

Manufacturer: onsemi

FQI8N60C n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQI8N60C
Manufacturer	onsemi
File Size	754.28 KB
Description	N-Channel MOSFET
Download	FQI8N60C Download (PDF)

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.

Key Features

7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A.
Low Gate Charge (Typ. 28 nC).
Low Crss (Typ. 12 pF).
100% Avalanche Tested.
RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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