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FQI7N60 Datasheet N-Channel MOSFET

Manufacturer: onsemi

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Datasheet Details

Part number FQI7N60
Manufacturer onsemi
File Size 398.68 KB
Description N-Channel MOSFET
Datasheet download datasheet FQI7N60 Datasheet

General Description

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

MOSFET – N-Channel, QFET 600 V, 7.4 A, 1.0 W FQB7N60, FQI7N60.

Key Features

  • 7.4 A, 600 V, RDS(on) = 1.0 W (Max. ) @ VGS = 10 V, ID = 3.7 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 16 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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