FQI3N60 - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI3N60
Manufacturer	Fairchild Semiconductor
File Size	581.82 KB
Description	600V N-Channel MOSFET
Datasheet	FQI3N60 Datasheet
Additional preview pages of the FQI3N60 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 1.

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Published: Apr 1, 2005 |