FQI2NA90 - 900V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQI2NA90
Manufacturer	Fairchild Semiconductor
File Size	707.21 KB
Description	900V N-Channel MOSFET
Datasheet	FQI2NA90 Datasheet
Additional preview pages of the FQI2NA90 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Apr 1, 2005 |