Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 8 A, 1000 V, RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V.
- Low Gate Charge (Typ. 53 nC).
- Low Crss (Typ. 16 pF).
- Fast Switching.
- 100% Avalanche Tested.
- Improved dv/dt Capability.
- RoHS Compliant
D
G D S
TO-247
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 2.
FQH8N100C Datasheet
