Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V.
- Low gate charge ( typical 85 nC).
- Low Crss ( typical 150 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating
GD S
TO-247
FQH Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source.
FQH70N10 Datasheet
