Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 48 A, 100 V, RDS(on) = 39 m (Max. ) @ VGS = 10 V, ID = 24 A.
- Low Gate Charge (Typ. 48 nC).
- Low Crss (Typ. 85 pF).
- 100% Avalanche Tested.
- 175C Maximum Junction Temperature Rating
D
G D S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100.
FQH44N10 Datasheet
