Full PDF Text Transcription for FQA7N80C_F109 (Reference)
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FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • L...
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es • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • Low Gate Charge (Typ. 27nC) • Low Crss (Typ. 10pF) • 100% Avalanche Tested • RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G DS TO
FQA7N80C_F109 Datasheet
