Datasheet Details
| Part number | FQA70N15 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 2.75 MB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FQA70N15 Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A.
- Low Gate Charge (Typ. 135 nC).
- Low Crss (Typ.135 pF).
- 100% Avalanche Tested.
- 175°C Maximum Junction Temperature Rating D G DS TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curent - Pulsed (Note 1) Gate.
