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FQA7N65C - 650V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V.
  • Low gate charge ( typical 28 nC).
  • Low Crss ( typical 12 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability February 2006 QFET ®.

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Full PDF Text Transcription for FQA7N65C (Reference)

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FQA7N65C 650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET Features • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 p...

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GS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electr

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