FDZ299P - P-Channel 2.5 V Specified PowerTrench BGA MOSFET
Fairchild (now onsemi)
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON).
Key Features
4.6 A,.
20 V RDS(ON) = 55 mΩ @ VGS =.
4.5 V RDS(ON) = 80 mΩ @ VGS =.
2.5 V.
Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6.
Ultra-thin package: less than 0.80 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
Full PDF Text Transcription for FDZ299P (Reference)
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FDZ299P. For precise diagrams, and layout, please refer to the original PDF.
FDZ299P February 2004 FDZ299P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with...
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Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • –4.6 A, –20 V RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.
FDZ299P Datasheet
