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FDZ294N - N-Channel 2.5 V Specified PowerTrench BGA MOSFET

General Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON).

Key Features

  • 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 34 mΩ @ VGS = 2.5 V.
  • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6.
  • Ultra-thin package: less than 0.85mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
  • Ultra-low Qg x RDS(ON) figure-of-merit.
  • High power and current handling capability.

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Full PDF Text Transcription for FDZ294N (Reference)

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www.DataSheet4U.com FDZ294N July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTre...

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ral Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 34 mΩ @ VGS = 2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.