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FDS8672S - N-Channel MOSFET

General Description

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge.

Key Features

  • Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A.
  • Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A.
  • Includes SyncFET Schottky body diode.
  • High performance trench technology for extremely low rDS(on) and fast switching.
  • High power and current handling capability.
  • 100% Rg (Gate Resistance) tested.
  • Termination is Lead-free and RoHS Compliant ® ™ General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8672S N-Channel PowerTrench® SyncFET™ December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ Features „ Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Includes SyncFET Schottky body diode „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ 100% Rg (Gate Resistance) tested „ Termination is Lead-free and RoHS Compliant ® ™ General Description tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge.