Datasheet Details
| Part number | FDS86242 |
|---|---|
| Manufacturer | onsemi |
| File Size | 230.73 KB |
| Description | 150V 4.1A N-Channel MOSFET |
| Datasheet |
 FDS86242 Datasheet
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General Description
This N
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Key Features
- Max rDS(on) = 67 mW at VGS = 10 V, ID = 4.1 A.
- Max rDS(on) = 98 mW at VGS = 6 V, ID = 3.3 A.
- High Performance Trench Technology for Extremely Low rDS(on).
- High Power and Current Handling Capability in a Widely Used Surface Mount Package.
- 100% UIL Tested.
- ESD Protection Level: HBM > 500 V, CDM > 2 kV.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.