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FDS8670 - 30V N-Channel PowerTrench MOSFET

General Description

This device has been designed specifically to improve the efficiency of DC-DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Key Features

  • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features • • • • • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.