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FDS7779Z - 30 Volt P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

Key Features

  • 16 A,.
  • 30 V. RDS(ON) = 7.2 mΩ @ VGS =.
  • 10 V RDS(ON) = 11.5 mΩ @ VGS =.
  • 4.5 V.
  • ESD protection diode (note 3).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25oC unless otherwise.

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Full PDF Text Transcription (Reference)

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FDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • –16 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V RDS(ON) = 11.5 mΩ @ VGS = – 4.