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FDS7760A - N-Channel Logic Level PowerTrench MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V.
  • Low gate charge (37nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS7760A February 2000 PRELIMINARY FDS7760A N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V. • Low gate charge (37nC typical) • Fast switching speed. • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability.