Datasheet Details
| Part number | FDFME3N311ZT |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 285.81 KB |
| Description | N-Channel MOSFET and Schottky Diode |
| Datasheet |
 FDFME3N311ZT Datasheet
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| Part number | FDFME3N311ZT |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 285.81 KB |
| Description | N-Channel MOSFET and Schottky Diode |
| Datasheet |
FDFME3N311ZT Datasheet
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Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.It
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