Datasheet Details
| Part number | FDFMA2N028Z |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 662.11 KB |
| Description | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| Datasheet |
 FDFMA2N028Z Datasheet
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| Part number | FDFMA2N028Z |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 662.11 KB |
| Description | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| Datasheet |
FDFMA2N028Z Datasheet
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MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.It
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