FDFM2N111 Key Features
- 4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V
- Low Profile
- 0.8 mm maximun
- in the new package
- Part: FDFM2N111
- Description: Integrated N-Channel PowerTrench MOSFET and Schottky Diode
- Manufacturer: Fairchild Semiconductor
- Size: 288.32 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDFM2P110 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2N028Z | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2P029Z | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2P853 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFMA2P853T | Integrated P-Channel MOSFET |