FDFC3N108 Key Features
- 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Part: FDFC3N108
- Description: N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
- Manufacturer: Fairchild Semiconductor
- Size: 111.49 KB
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