EMB20N03VAT
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
20mΩ
7A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
Bottom View
GD D
PIN 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H, ID=10A, RG=25Ω
L = 0.05m H
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
LIMITS ±20 7 5.5 28 10 5 2.5 2.08 1.33
‐55 to 150
UNIT V A m J W °C
THERMAL RESISTANCE RATINGS THERMAL...
