EMB20N03V
Description
:
N-CH
BVDSS
30V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
20.0mΩ 30.0mΩ
ID @TC=25℃
22.0A
ID @TA=25℃
8.0A
Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
ID IDM IAS EAS EAR PD
PD Tj, Tstg
- THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％
360°C / W when mounted on a 1 in2 pad of 2 oz...
