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N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
20mΩ
ID
12A
N‐Channel MOSFET
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
TC = 25 °C ID
TA = 25 °C
Pulsed Drain Current1
TC = 100 °C IDM
Avalanche Current
IAS
Avalanche Energy
L = 0.1mH, IAS=10A, RG=25Ω
EAS
Repetitive Avalanche Energy2
L = 0.
EMB20N03V Datasheet
