EMB20N03VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V
20mΩ 30mΩ
ID@TC=25°C
22A
Single N‐Channel MOSFET
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
TC = 25 °C TA = 25 °C
Pulsed Drain Current1
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, IAS=10A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
SYMBOL VGS ID
IDM IAS EAS EAR PD
PD Tj, Tstg
LIMITS ±20 12 9 9 88 10 5 2.5 20.8 8.3 2.5 1
‐55 to 150
UNIT V A m J W W °C
2019/08/26 p.1
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case...
