EMB09N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09N03HR
Manufacturer	Excelliance MOS
File Size	334.30 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09N03HR Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB09N03H	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G EMB09N03HR UIS, Rg 100% Tested S RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 50 ID TC = 100 °C 35 IDM 140 Avalanche Current IAS 37.5 Avalanche Energy L = 0.1mH, ID=37.5A, RG=25Ω EAS 70 Repetitive Avalanche Energy2 L = 0.05mH EAR 15 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 26 -55 to 150 100% UIS testing in condition of VD=25V, L=0.