EMB09N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09N03G
Manufacturer	Excelliance MOS
File Size	185.80 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09N03G Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB09N03A	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 14A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB09N03G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=14A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 14 11 50 14 9.8 4.9 2.5 1 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.