EMB09N03G Datasheet | Excelliance MOS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 9.5mΩ 14A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H, ID=14A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05m H Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 14 11 50 14 9.8 4.9 2.5 1 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.1m H, VG=10V, IL=14A, Rated VDS=30V N‐CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction‐to‐Case RJC Junction‐to‐Ambient3...