EMB09N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09N03A
Manufacturer	Excelliance MOS
File Size	388.23 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09N03A Datasheet

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Other Datasheets by Excelliance MOS

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EMB09N03G	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB09N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V 9.0mΩ RDSON (MAX.)@VGS=4.5V 13.5mΩ ID @TC=25℃ 58A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 58 ID TC = 100 °C 36 IDM 140 Avalanche Current IAS 31 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH EAS 48 EAR 24 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=25V, L=0.