EMB09N03A
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH
BVDSS
30V
RDSON (MAX.)@VGS=10V
9.0mΩ
RDSON (MAX.)@VGS=4.5V
13.5mΩ
ID @TC=25℃
58A
Single N Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
50 20 -55 to 150
100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL=20A, Rated VDS=25V N-CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL...
