Click to expand full text
e
PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
25 Volt, 900–960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power and Efficiency vs. Input Power
2.0 80
VCC = 25 V
1.5
Output Power (Watts)
ICQ = 175 mA f = 960 MHz
60
1.
PTB20189 Datasheet
