Click to expand full text
e
PTB 20187 4 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
4 Watts, 1.80–2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
6
Output Power (Watts)
5
4
201 87
LO TC OD E
VCC = 26 V
3
ICQ = 50 mA f = 1.8-2.0 GHz
2 0.0 0.2 0.4 0.6 0.
PTB20187 Datasheet
