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PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
2.5 Watts, 1.8–2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
Output Power (Watts)
0.8 0.6 0.4
20 18 0
LO TC OD E
VCC = 26 V
0.2 0.0 0.00
ICQ = 20 mA f = 2 GHz
0.02 0.04 0.06 0.08 0.
PTB20180 Datasheet
