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3N169. For precise diagrams, and layout, please refer to the original PDF.
3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications. I • Low Switchi...
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sistors designed for low-power switching applications. I • Low Switching Voltages - VGS(th)';; 3.0 Vdc • Fast Switching Times .- tr';; 10 ns I • Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i • Low Reverse Transfer Car;acitance Crss = 1.3 pF (Max) I .. Ma"ufdctur~<i USing the N~w Silicun Nitride Process Resulting in i a Stable VGS(th) and Gate Oxide Breakdown Protection to i Typical Transients of ± 150 Volts Peak IL________________________________________~ MOS FIELD-EFFECT TRANSISTORS N-CHANNEL ,-_. ------.-MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating I Symbol Value Forain-Source Voltage ~i.te-source!
3N169 Datasheet
