Download the 3N156A datasheet PDF.
This datasheet also covers the 3N155A variant, as both devices belong to the same p-channel transistor family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for 3N156A (Reference)
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3N156A. For precise diagrams, and layout, please refer to the original PDF.
3N 155,A (SILICON) 3N156,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application. CASE 20 (T0-...
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ansistors designed for chopper and switching application. CASE 20 (T0-72) O2 o STYLE Z PIN 1. SOURCE Z. GATE 1 000 3 3. DRAIN 4. SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS 1D PD TJ Tstg Value 35 35 50 30 300 1.7 -65 to +175 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW;oC °c °c HANDLING PRECAUTIONS: MOS field-effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess sta
3N156A Datasheet
