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3N140. For precise diagrams, and layout, please refer to the original PDF.
1403N (SILICON) N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR Depletion mode (Type B) dual-gate transistor designed for VHF amplifier and mix...
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mode (Type B) dual-gate transistor designed for VHF amplifier and mixer applications_ N-CHANNEL DUAL-GATE MOS FIELD-EFFECT TRANSISTOR TypeB • Silicon-Nitride Passivation for Excellent Long Term Stability • High Common-Source Power Gain - Gps = 16 dB (Min) @f =200 MHz • Low Reverse Transfer Capacitance - Crss =0.02 pF (Typ) @ VOS = 13 Vdc U MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate I Voltage Drain-Gate 2 Voltage Reverse Gate I-Source Voltage Reverse Gate 2-Source Voltage Forward Gate I-Source Voltage Forward Gate 2-Source Voltage Drain Current Totai Device .
3N140 Datasheet
