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ELM4N0026FAA-N - Single N-channel MOSFET

Key Features

  • ELM4N0026FAA-N uses advanced trench technology.
  • Vds=100V to provide excellent Rds(on), low gate charge and low.
  • Id=7.5A (Vgs=10V) gate threshold voltage.
  • Rds(on) = 20mΩ (Vgs=10V).
  • Rds(on) = 25mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Ta=25°C Stor.

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Datasheet Details

Part number ELM4N0026FAA-N
Manufacturer ELM
File Size 1.37 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N0026FAA-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM4N0026FAA-N https://www.elm-tech.com ■General description ■Features ELM4N0026FAA-N uses advanced trench technology • Vds=100V to provide excellent Rds(on), low gate charge and low • Id=7.5A (Vgs=10V) gate threshold voltage. • Rds(on) = 20mΩ (Vgs=10V) • Rds(on) = 25mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm EAS Ias Pd Tstg Tj Limit 100 ±20 7.5 6.0 40 16 18 2.