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ELM4N0004FDA-N - Single N-channel MOSFET

General Description

ELM4N0004FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=100V.
  • Id=12A (Vgs=10V).
  • Rds(on) = 112mΩ (Vgs=10V).
  • Rds(on) = 120mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current (Vgs=10V) Tc=100°C Ta=25°C Ta=70°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj.

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Datasheet Details

Part number ELM4N0004FDA-N
Manufacturer ELM
File Size 1.40 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N0004FDA-N Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM4N0004FDA-N ■General description ELM4N0004FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=100V • Id=12A (Vgs=10V) • Rds(on) = 112mΩ (Vgs=10V) • Rds(on) = 120mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current (Vgs=10V) Tc=100°C Ta=25°C Ta=70°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 100 ±20 12.0 7.7 3.0 2.4 24 6.1 11.0 34.7 2.