Datasheet Details
| Part number | ELM4N0008FRA-S |
|---|---|
| Manufacturer | ELM |
| File Size | 957.66 KB |
| Description | Single N-channel MOSFET |
| Datasheet |
 ELM4N0008FRA-S Datasheet
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General Description
ELM4N0008FRA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.
Key Features
- Vds=100V.
- Id=2.2A.
- Rds(on) = 310mΩ (Vgs=10V).
- Rds(on) = 320mΩ (Vgs=4.5V).
- Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 100 ±20 2.2 1.7 5.5 1.5 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 W 3 °C °C.