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DMN10H120SE - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DC-DC Converters Power Management Functions DMN10H120SE 100V N-CHANNEL E

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram Below.
  • Terminals: Finish - Matte Ti.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A D V A N C E E DN IENWF OPRR OMDA TUICOTN Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.6A 3.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions DMN10H120SE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.