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DMN10H170SFDE - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions Battery Operated Systems and Solid-State Relays

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.6A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.