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DMN10H170SFG - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters POWERDI3333 DMN10

Key Features

  • 100% Unclamped Inductive Switch (UIS) test in production.
  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.