Datasheet4U Logo Datasheet4U.com

DMN10H099SFG - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions DC-DC Converters Mechanical Data Case: POWERDI333

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMN10H099SK3 N-Channel MOSFET INCHANGE
DMN10H100SK3 N-Channel MOSFET INCHANGE
DMN100 N-Channel MOSFET Diodes Incorporated
DMN15H310SK3 N-Channel MOSFET INCHANGE
DMN-8602 DVD Recorder System Processor LSI Logic

Other Datasheets by Diodes Incorporated

Part Number Description
DMN10H099SK3 N-Channel MOSFET
DMN10H100SK3 N-Channel MOSFET
DMN10H120SE N-Channel MOSFET
DMN10H120SFG N-Channel MOSFET
DMN10H170SFDE N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCE INFORMATION DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 100V RDS(ON) max 80mΩ @ VGS = 10V 99mΩ @ VGS = 6.0V ID max TA = +25°C 4.2A 3.6A Features and Benefits  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.